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並前往https://www.semanticscholar.org/paper/Reliability-Concerns-on-LDMOS-With-Different-Layout-Ye-Su/45aeaa8ae52c2c29429a51ea519710c621ad89e1

Reliability Concerns on LDMOS With Different Split-STI Layout ...

Compared with the full shallow trench isolation (full-STI) lateral double-diffused MOS (LDMOS), the split-STI LDMOS has been demonstrated as ...

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