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並前往https://lage.physics.ucdavis.edu/support_files/electronics_papers/Yang_2008_04796660.pdf

Scaling of 32nm Low Power SRAM with High-K Metal Gate

This paper describes SRAM scaling for 32nm low power bulk technology, enabled by high-K metal gate process, down to 0.149μm2 and 0.124μm2. SRAM access.

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