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並前往https://www.researchgate.net/publication/3075246_Reliability_and_Thermal_Stability_of_Clustered_Vertical_Furnace-Grown_SiO2_With_HfxTayN_Metal_Gate_for_Advanced_MOS_Device_Application

Reliability and Thermal Stability of Clustered Vertical Furnace ...

Bhabani Shankar Sahu at B. S. Abdur Rahman University ... corresponding to a p-type dopant level of 1.1×1012 B ions/cm2 as the activation temperature .

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