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並前往https://www.cambridge.org/core/journals/mrs-bulletin/article/gate-contact-materials-in-si-channel-devices/AF062B4A0E601E23EB837A9EBC8E150A

Gate contact materials in Si channel devices | MRS Bulletin

The metal nitride gate electrode and polysilicon top electrode are deposited, and the entire gate stack must be patterned to define the active gates. The next ...

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