你即將離開本站

並前往https://dspace.mit.edu/bitstream/handle/1721.1/36872/6-152JFall2003/NR/rdonlyres/Electrical-Engineering-and-Computer-Science/6-152JFall2003/6E1AED06-7850-424A-AD97-EFDBC927F0E6/0/lecture8a.pdf

ion implantation - DSpace@MIT

Ion implantation is preferred because: -controlled, low or high dose can be introduced (1011 - 1018 cm-2). -depth of implant can be controlled.

確定！ 回上一頁

查詢 「Ion implant」的人也找了：

  1. Ion implantation vs diffusion
    2.
  2. What is ion implantation technology
    3.
  3. implanter原理
    4.
  4. implant半導體
    5.
  5. well implant目的
    6.
  6. Amat implanter
    7.
  7. Ion Implantation for Semiconductor Devices: The Largest Use of Industrial Accelerators
    8.
  8. Implant Rp
    9.