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並前往http://manfragroup.org/wp-content/uploads/2014/12/Unpassivated-AlGaN-GaN-HEMTs-with-CW-power-density-of-3.2-W-mm-at-25-GHz-grown-by-plasma-assisted-MBE.pdf

Unpassivated AlGaN/GaN HEMTs, with CW power density of ...

s.M. (Ed.): 'Physics ofsemiconductor devices' (lohi Wilcy & Sons, ... S-parameter measurement^ yielded an /r of 53 GHz and Jvm of. 109GHn.

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