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並前往http://www.diva-portal.org/smash/get/diva2:495391/FULLTEXT01.pdf_1

Mobility in Graphene Double Gate Field Effect Transistors - DIVA

films of tox = 300 nm have been thermally grown on boron doped silicon wafers (100) with a base doping concentration of NA = 1015 cm-3. A.

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