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並前往https://www.nxp.com/docs/en/data-sheet/BF245A-B-C.pdf

BF245B; BF245C N-channel silicon field-effect transistors - NXP

SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. VDS drain-source voltage. -. ±30. V. VGDO gate-drain voltage open source.

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